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BDY43 NPN Transistor

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Description

isc Silicon NPN Power Transistor BDY43 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min. DC Current Gain- : hFE=20(Min. Collector-Emitter Saturation Voltag.

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Datasheet Specifications

Part number
BDY43
Manufacturer
INCHANGE
File Size
202.69 KB
Datasheet
BDY43-INCHANGE.pdf
Description
NPN Transistor

Applications

* Voltage regulator
* Inverter
* Switching mode power supply ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 600 V VCES Collector-Emitter Voltage 600 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 7 V IC Colle

BDY43 Distributors

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