BDY45 NPN Transistor

INCHANGE

Description

isc Silicon NPN Power Transistor BDY45 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 250V(Min. DC Current Gain- : hFE=20(Min. Collector-Emitter Saturation Voltag.

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Datasheet Specifications

Part number: BDY45
Manufacturer: INCHANGE
File Size: 200.98 KB
Datasheet: BDY45-INCHANGE.pdf
Description: NPN Transistor

Applications

* Voltage regulator
* Inverter
* Switching mode power supply ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 400 V VCES Collector-Emitter Voltage 400 V VCEO Collector-Emitter Voltage 250 V VEBO Emitter-Base Voltage 7 V IC Collec

BDY45 Distributors

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BDY45 NPN Transistor INCHANGE

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