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BD844 PNP Transistor

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Description

isc Silicon PNP Power Transistor INCHANGE Semiconductor BD844 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min). High DC Current Gain. Low Saturation Voltage. Complement to Type BD843.

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Datasheet Specifications

Part number
BD844
Manufacturer
INCHANGE
File Size
207.36 KB
Datasheet
BD844-INCHANGE.pdf
Description
PNP Transistor

Applications

* Designed for driver-stages in hi-fi amplifiers and television circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -1.5 A

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