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BD840 PNP Transistor

BD840 Description

isc Silicon PNP Power Transistor INCHANGE Semiconductor BD840 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -45V(Min). High DC Current Gain. Low Saturation Voltage. Complement to Type BD839.

BD840 Applications

* Designed for driver-stages in hi-fi amplifiers and television circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -45 V VCEO Collector-Emitter Voltage -45 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -1.5 A

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Datasheet Details

Part number
BD840
Manufacturer
INCHANGE
File Size
207.91 KB
Datasheet
BD840-INCHANGE.pdf
Description
PNP Transistor

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PNP Transistor INCHANGE
INCHANGE BD840-like datasheet