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AOT1N60 N-Channel MOSFET

AOT1N60 Description

isc N-Channel MOSFET Transistor AOT1N60 .
Designed for use in switch mode power supplies and general purpose applications.

AOT1N60 Features

* Drain Current
* ID=1.3A@ TC=25℃
* Drain Source Voltage- : VDSS=600V(Min)
* Static Drain-Source On-Resistance : RDS(on) = 9.0Ω(Max)
* 100% avalanche tested

AOT1N60 Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 1.3 A IDM Drain Current-Single Pluse 4 A PD Total Dissipation @TC=25℃ 41.7 W TJ Max. Operating Junction Tempera

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Datasheet Details

Part number
AOT1N60
Manufacturer
INCHANGE
File Size
257.08 KB
Datasheet
AOT1N60-INCHANGE.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET INCHANGE
INCHANGE AOT1N60-like datasheet