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AOT11N60 N-Channel MOSFET

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Description

isc N-Channel MOSFET Transistor AOT11N60 .
Designed for use in switch mode power supplies and general purpose applications.

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Datasheet Specifications

Part number
AOT11N60
Manufacturer
INCHANGE
File Size
255.60 KB
Datasheet
AOT11N60-INCHANGE.pdf
Description
N-Channel MOSFET

Features

* Drain Current
* ID= 11A@ TC=25℃
* Drain Source Voltage- : VDSS= 600V(Min)
* Static Drain-Source On-Resistance : RDS(on) = 0.7Ω(Max)
* 100% avalanche tested

Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 11 A IDM Drain Current-Single Pluse 39 A PD Total Dissipation @TC=25℃ 272 W TJ Max. Operating Junction Temperat

AOT11N60 Distributors

📁 Related Datasheet

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N-Channel MOSFET INCHANGE
INCHANGE AOT11N60-like datasheet