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AOT11S65 Power Transistor

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Description

AOT11S65/AOB11S65/AOTF11S65 650V 11A α MOS TM Power Transistor General .
The AOT11S65 & AOB11S65 & AOTF11S65 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of per.

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Datasheet Specifications

Part number
AOT11S65
Manufacturer
Freescale
File Size
597.17 KB
Datasheet
AOT11S65_Freescale.pdf
Description
Power Transistor

Features

* VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V 750V 45A 0.399Ω 13.2nC 2.9µJ D G S C unless otherwise noted Absolute Maximum Ratings TA=25° Symbol AOT11S65/AOB11S65 Parameter VDS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Current C Repetitive

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