Datasheet Details
| Part number | 2SD1139 |
|---|---|
| Manufacturer | INCHANGE |
| File Size | 188.86 KB |
| Description | NPN Transistor |
| Datasheet |
 2SD1139-INCHANGE.pdf
|
| Part number | 2SD1139 |
|---|---|
| Manufacturer | INCHANGE |
| File Size | 188.86 KB |
| Description | NPN Transistor |
| Datasheet |
2SD1139-INCHANGE.pdf
|
High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V (Min) Wide Area of Safe Operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier TV vertical deflection output applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 6
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