Datasheet4U Logo Datasheet4U.com

2SB1287 - PNP Transistor

Description

High DC Current Gain- :hFE = 1000(Min)@ IC= -1A Collector-Emitter Breakdown Voltage- :V(BR)CEO = -100V(Min) Low Collector-Emitter Saturation Voltage :VCE(sat) = -1.5V(Max)@ IC= -1A Complement to Type 2SD1765 Minimum Lot-to-Lot variations for robust device performance and rel

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SB1287 SILICON POWER TRANSISTOR SavantIC
2SB1282 Darlington Transistor Shindengen Electric Mfg.Co.Ltd
2SB1283 Darlington Transistor Shindengen Electric Mfg.Co.Ltd
2SB1284 Darlington Transistor Shindengen Electric Mfg.Co.Ltd
2SB1285 Darlington Transistor Shindengen Electric Mfg.Co.Ltd

Other Datasheets by Inchange Semiconductor

Part Number Description
2SB1283 PNP Transistor
2SB1284 PNP Transistor
2SB1286 PNP Transistor
2SB1289 PNP Transistor
2SB1205 PNP Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc Silicon PNP Darlington Power Transistor DESCRIPTION ·High DC Current Gain- :hFE = 1000(Min)@ IC= -1A ·Collector-Emitter Breakdown Voltage- :V(BR)CEO = -100V(Min) ·Low Collector-Emitter Saturation Voltage :VCE(sat) = -1.5V(Max)@ IC= -1A ·Complement to Type 2SD1765 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications.
Published: |