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2SB1289 - PNP Transistor

Description

High Collector Current:: IC= -7A Low Collector Saturation Voltage : VCE(sat)= -1.0V(Max)@IC= -4A Wide Area of Safe Operation Complement to Type 2SD1580 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low freq

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isc Silicon PNP Power Transistor 2SB1289 DESCRIPTION ·High Collector Current:: IC= -7A ·Low Collector Saturation Voltage : VCE(sat)= -1.0V(Max)@IC= -4A ·Wide Area of Safe Operation ·Complement to Type 2SD1580 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -7 A ICM Collector Current-Peak PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -10 A 40 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.
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