Datasheet4U Logo Datasheet4U.com

2SB1284 - PNP Transistor

Description

High DC Current Gain- : hFE= 1500(Min.)@IC= -5A Low Collector Saturation Voltage- : VCE(sat)= -1.5V(Max)@IC= -5A Good Linearity of hFE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

High power switching applications.

Hamm

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SB1284 Darlington Transistor Shindengen Electric Mfg.Co.Ltd
2SB1282 Darlington Transistor Shindengen Electric Mfg.Co.Ltd
2SB1283 Darlington Transistor Shindengen Electric Mfg.Co.Ltd
2SB1285 Darlington Transistor Shindengen Electric Mfg.Co.Ltd
2SB1286 SILICON POWER TRANSISTOR SavantIC

Other Datasheets by Inchange Semiconductor

Part Number Description
2SB1283 PNP Transistor
2SB1286 PNP Transistor
2SB1287 PNP Transistor
2SB1289 PNP Transistor
2SB1205 PNP Transistor

Full PDF Text Transcription

Click to expand full text
isc Silicon PNP Darlingtion Power Transistor DESCRIPTION ·High DC Current Gain- : hFE= 1500(Min.)@IC= -5A ·Low Collector Saturation Voltage- : VCE(sat)= -1.5V(Max)@IC= -5A ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High power switching applications. ·Hammer drive, pulse motor drive applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO VEBO IC ICM Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak -100 V -100 V -7 V -10 A -15 A IB Base Current-Continuous IBM Base Current-peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -0.8 A -1.
Published: |