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H5TQ4G63MFR-xxI, H5TQ4G83MFR-xxC 4Gb DDR3 SDRAM

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Description

4Gb DDR3 SDRAM 4Gb DDR3 SDRAM Lead-Free&Halogen-Free (RoHS Compliant) H5TQ4G83MFR-xxC H5TQ4G83MFR-xxI H5TQ4G83MFR-xxJ H5TQ4G63MFR-xxC H5TQ4G63MFR-xx.
The H5TQ4G83MFR-xxC,H5TQ4G63MFR-xxC, H5TQ4G83MFR-xxI, H5TQ4G63MFR-xxI, H5TQ4G83MFR-xxJ and H5TQ4G63MFR-xxJ are a 4,294,967,296-bit CMOS Double Data Ra.

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This datasheet PDF includes multiple part numbers: H5TQ4G63MFR-xxI, H5TQ4G83MFR-xxC. Please refer to the document for exact specifications by model.
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Datasheet Specifications

Part number
H5TQ4G63MFR-xxI, H5TQ4G83MFR-xxC
Manufacturer
Hynix
File Size
274.84 KB
Datasheet
H5TQ4G83MFR-xxC_Hynix.pdf
Description
4Gb DDR3 SDRAM
Note
This datasheet PDF includes multiple part numbers: H5TQ4G63MFR-xxI, H5TQ4G83MFR-xxC.
Please refer to the document for exact specifications by model.

Features

* and Ordering Information FEATURES
* VDD=VDDQ=1.5V +/- 0.075V
* Fully differential clock inputs (CK, CK) operation
* Differential Data Strobe (DQS, DQS)
* On chip DLL align DQ, DQS and DQS transition with CK transition
* DM masks write data-in at the both risin

Applications

* which requires large memory density and high bandwidth. Hynix 4Gb DDR3 SDRAMs offer fully synchronous operations referenced to both rising and falling edges of the clock. While all addresses and control inputs are latched on the rising edges of the CK (falling edges of the CK), Data, Data strobes an

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