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H5TQ4G63EFR, H5TQ4G83EFR 4Gb DDR3 SDRAM

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Description

4Gb DDR3 SDRAM 4Gb DDR3 SDRAM Lead-Free&Halogen-Free (RoHS Compliant) H5TQ4G83EFR-xxC H5TQ4G83EFR-xxI H5TQ4G83EFR-xxL H5TQ4G83EFR-xxJ H5TQ4G83EFR-xxK.
The H5TQ4G83EFR-xxC,H5TQ4G63EFR-xxC, H5TQ4G83EFR-xxI, H5TQ4G63EFR-xxI, H5TQ4G83EFR-xxL, H5TQ4G63EFR-xxL, H5TQ4G83EFR-xxJ, H5TQ4G63EFR-xxJ, H5TQ4G83EFR.

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This datasheet PDF includes multiple part numbers: H5TQ4G63EFR, H5TQ4G83EFR. Please refer to the document for exact specifications by model.
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Datasheet Specifications

Part number
H5TQ4G63EFR, H5TQ4G83EFR
Manufacturer
Hynix Semiconductor
File Size
430.73 KB
Datasheet
H5TQ4G83EFR-HynixSemiconductor.pdf
Description
4Gb DDR3 SDRAM
Note
This datasheet PDF includes multiple part numbers: H5TQ4G63EFR, H5TQ4G83EFR.
Please refer to the document for exact specifications by model.

Features

* and Ordering Information FEATURES
* VDD=VDDQ=1.5V +/- 0.075V
* Fully differential clock inputs (CK, CK) operation
* Differential Data Strobe (DQS, DQS)
* On chip DLL align DQ, DQS and DQS transition with CK transition
* DM masks write data-in at the both ris

Applications

* which requires large memory density and high bandwidth. SK Hynix 4Gb DDR3 SDRAMs offer fully synchronous operations referenced to both rising and falling edges of the clock. While all addresses and control inputs are latched on the rising edges of the CK (falling edges of the CK), Data, Data strobes

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