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H5TQ4G63AFR-xxC, H5TQ4G43AFR-xxC 4Gb DDR3 SDRAM

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Description

4Gb DDR3 SDRAM 4Gb DDR3 SDRAM Lead-Free&Halogen-Free (RoHS Compliant) H5TQ4G43AFR-xxC H5TQ4G83AFR-xxC H5TQ4G63AFR-xxC * SK hynix reserves the r.
The H5TQ4G43AFR-xxC, H5TQ4G83AFR-xxC and H5TQ4G63AFR-xxC are a 4Gb CMOS Double Data Rate III (DDR3) Synchronous DRAM, ideally suited for the main memo.

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This datasheet PDF includes multiple part numbers: H5TQ4G63AFR-xxC, H5TQ4G43AFR-xxC. Please refer to the document for exact specifications by model.
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Datasheet Specifications

Part number
H5TQ4G63AFR-xxC, H5TQ4G43AFR-xxC
Manufacturer
Hynix Semiconductor
File Size
780.09 KB
Datasheet
H5TQ4G43AFR-xxC_HynixSemiconductor.pdf
Description
4Gb DDR3 SDRAM
Note
This datasheet PDF includes multiple part numbers: H5TQ4G63AFR-xxC, H5TQ4G43AFR-xxC.
Please refer to the document for exact specifications by model.

Features

* and Ordering Information FEATURES
* VDD=VDDQ=1.5V +/- 0.075V
* Fully differential clock inputs (CK, CK) operation
* 8banks
* Average Refresh Cycle (Tcase of 0 oC~ 95 oC)
* Differential Data Strobe (DQS, DQS) - 7.8 µs at 0oC ~ 85 oC - 3.9 µs at 85oC ~ 95 oC

Applications

* which requires large memory density and high bandwidth. 4Gb DDR3 SDRAMs offer fully synchronous operations referenced to both rising and falling edges of the clock. While all addresses and control inputs are latched on the rising edges of the CK (falling edges of the CK), Data, Data strobes and Writ

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