HY57V561620FT-6 256M (16M x 16bit) Hynix SDRAM Memory

Hynix Semiconductor

Description

256Mb Synchronous DRAM based on 4M x 4Bank x16 I/O 256M (16Mx16bit) Hynix SDRAM Memory Memory Cell Array - Organized as 4banks of 4,194,304 x 16 This.
and is subject to change without notice.

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Datasheet Specifications

Part number: HY57V561620FT-6
Manufacturer: Hynix Semiconductor
File Size: 727.86 KB
Datasheet: HY57V561620FT-6-HynixSemiconductor.pdf
Description: 256M (16M x 16bit) Hynix SDRAM Memory

Features

* Standard SDRAM Protocol
* Internal 4bank operation
* Power Supply Voltage : VDD = 3.3V, VDDQ = 3.3V
* All device pins are compatible with LVTTL interface
* Low Voltage interface to reduce I/O power
* 8,192 Refresh cycles / 64ms
* Programmable CAS latency of 2 or 3

Applications

* (portable multimedia player and portable audio player). Also, Hynix SDRAMs is used high-speed consumer applications. Short for Hynix Synchronous DRAM, a type of DRAM that can run at much higher clock speeds memory. The Hynix HY57V561620F(L)T(P) Synchronous DRAM is 268,435,456bit CMOS Synchronous DRA

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HY57V561620FT-6 256M 16M 16bit Hynix SDRAM Memory Hynix Semiconductor

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