Datasheet Specifications
- Part number
- HY27UH088G2M
- Manufacturer
- Hynix Semiconductor
- File Size
- 463.12 KB
- Datasheet
- HY27UH088G2M_HynixSemiconductor.pdf
- Description
- 8G-Bit NAND Flash Memory
Description
w e e Document h Title 8Gbit (1Gx8bit) S NAND Flash Memory a at Revision .D History w w Revision No.0.0 U 4 t .m o c Preliminary HY27UH088G(2/D.Features
* 9) Change AC Characteristics - Errata is deleted. tWC Before After 0.4 - tR is change tR Before After 25us 30us 60ns 50ns tWP 35ns 25ns tWH 20ns 15ns Sep. 16. 2005 Preliminary 10) Change DC Characteristics (Table 8) - Operation Current ICC1 Typ Before After 30 40 ICC2 Typ 30 40 ICC3 Typ 30 40 ILIApplications
* NAND INTERFACE - x8 bus width. - Multiplexed Address/ Data - Pinout compatibility for all densities STATUS REGISTER ELECTRONIC SIGNATURE - Manufacturer Code - Device Code CHIP ENABLE DON'T CARE OPTION - Simple interface with microcontroller AUTOMATIC PAGE 0 READ AT POWER-UP OPTION - Boot from NAND sHY27UH088G2M Distributors
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