HY27UA1G1M 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory

Hynix Semiconductor

Description

HY27UA(08/16)1G1M Series HY27SA(08/16)1G1M Series 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Document Title 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Mem.
of Device Operations - /CE Don’t Care Enabled(Disabled) -> Sequential Row Read Disabled (Enabled) (Page22) 4) Add the description of System Interface.

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Datasheet Specifications

Part number: HY27UA1G1M
Manufacturer: Hynix Semiconductor
File Size: 781.84 KB
Datasheet: HY27UA1G1M_HynixSemiconductor.pdf
Description: 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory

Applications

* FAST BLOCK ERASE - Block erase time: 2ms (Typ) NAND INTERFACE - x8 or x16 bus width. - Multiplexed Address/ Data - Pinout compatibility for all densities STATUS REGISTER ELECTRONIC SIGNATURE SUPPLY VOLTAGE Sequential Row Read Option : HY27UAXX1G1M www. DataSheet4U. com - 3.3V device: VCC = 2.7

HY27UA1G1M Distributors

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HY27UA1G1M 1Gbit 128Mx8bit 64Mx16bit NAND Flash Memory Hynix Semiconductor

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