HY27UH084G2M (HY27xHxx4G2M Series) 4G-Bit NAND Flash Memory

Hynix Semiconductor

Description

m Preliminary o HY27UH(08/16)4G2M Series .c HY27SH(08/16)4G2M Series U 4Gbit (512Mx8bit / 256Mx16bit) NAND Flash 4 t e e h S Document Title a 4Gbit (5.
The HYNIX HY27(U/S)H(08/16)4G2M series is a 512Mx8bit with spare 8Mx8 bit capacity.

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Datasheet Specifications

Part number: HY27UH084G2M
Manufacturer: Hynix Semiconductor
File Size: 367.65 KB
Datasheet: HY27UH084G2M_HynixSemiconductor.pdf
Description: (HY27xHxx4G2M Series) 4G-Bit NAND Flash Memory

Applications

* NAND INTERFACE - x8 or x16 bus width. - Multiplexed Address/ Data - Pinout compatibility for all densities FAST BLOCK ERASE - Block erase time: 2ms (Typ. ) STATUS REGISTER ELECTRONIC SIGNATURE - Manufacturer Code - Device Code SUPPLY VOLTAGE - 3.3V device: VCC = 2.7 to 3.6V : HY27UHXX4G2M CHIP ENABLE

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HY27UH084G2M HY27xHxx4G2M Series 4G-Bit NAND Flash Memory Hynix Semiconductor

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