CS840FA9D Datasheet (Huajing Microelectronics) - Silicon N-Channel Power MOSFET

CS840FA9D, Silicon N-Channel Power MOSFET

CS840F A9D, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD(TC=25℃) RDS(ON)Typ 500 7 35 0.68 performance and enhance the avalanche energy.

The transistor can be used in various power switc

CS840FA9D Features

* l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data:24nC) l Low Reverse transfer capacitances(Typical:10.4pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter