CS830A8RD - Silicon N-Channel Power MOSFET

Huajing Microelectronics

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Datasheet Details

Part number	CS830A8RD
Manufacturer	Huajing Microelectronics
File Size	249.21 KB
Description	Silicon N-Channel Power MOSFET
Datasheet	CS830A8RD-HuajingMicroelectronics.pdf

CS830A8RD Product details

Description

CS830 A8RD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.The package form is TO-220AB, which accords with the RoHS standard.

Features

l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data: 14.5nC) l Low Reverse transfer capacitances(Typical:7.5pF) l 100% Single Pulse avalanche energy Test.

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Published: Dec 6, 2016 |