CS840FA9H Datasheet (Huajing Microelectronics) - Silicon N-Channel Power MOSFET

CS840FA9H, Silicon N-Channel Power MOSFET

CS840F A9H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD (TC=25℃) RDS(ON)Typ 500 8 45 0.57 performance and enhance the avalanche energy.

The transistor can be used in various power swit

CS840FA9H Features

* l Fast Switching l Low ON Resistance(Rdson≤0.75Ω) l Low Gate Charge (Typical Data:28nC) l Low Reverse transfer capacitances(Typical:18pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Param