CS6N90ARH-G - Silicon N-Channel Power MOSFET

Huajing Microelectronics

CS6N90ARH-G Datasheet Preview — Preview of CS6N90ARH-G PDF

Datasheet Details

Part number	CS6N90ARH-G
Manufacturer	Huajing Microelectronics
File Size	642.44 KB
Description	Silicon N-Channel Power MOSFET
Datasheet	CS6N90ARH-G-HuajingMicroelectronics.pdf

CS6N90ARH-G Product details

Description

CS6N90 ARH-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.The package form is TO-262, which accords with the RoHS standard.

Features

l Fast Switching l Low ON Resistance(Rdson≤2.3Ω ) l Low Gate Charge (Typical Data:34nC) l Low Reverse transfer capacitances(Typical:11pF) l 100% Single Pulse avalanche energy Test l Halogen Free.

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Published: Dec 6, 2016 |