CS6N90B4R-G - Silicon N-Channel Power MOSFET

CR Micro

CS6N90B4R-G Datasheet Preview — Preview of CS6N90B4R-G PDF

Datasheet Details

Part number	CS6N90B4R-G
Manufacturer	CR Micro
File Size	588.25 KB
Description	Silicon N-Channel Power MOSFET
Datasheet	CS6N90B4R-G-HuajingMicroelectronics.pdf

CS6N90B4R-G Product details

Description

CS6N90 B4R-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.The package form is TO-252, which accords with the RoHS standard.

Features

Fast Switching.
Low ON Resistance(Rdson≤2.5Ω).
Low Gate Charge (Typical Data: 30.1nC).
Low Reverse transfer capacitances(Typical:6.4pF).
100% Single Pulse avalanche energy Test.
Halogen Free.

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Published: Dec 19, 2024 |