CS6N60A4D - Silicon N-Channel Power MOSFET

Huajing Microelectronics

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Datasheet Details

Part number	CS6N60A4D
Manufacturer	Huajing Microelectronics
File Size	351.27 KB
Description	Silicon N-Channel Power MOSFET
Datasheet	CS6N60A4D-HuajingMicroelectronics.pdf

CS6N60A4D Product details

Description

CS6N60 A4D, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD(TC=25℃) RDS(ON)Typ 600 6 95 1.0 performance and enhance the avalanche energy.The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.The package form is TO-252, which accords with the RoHS standard.

Features

l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data: 25nC) l Low Reverse transfer capacitances(Typical: 10pF) l 100% Single Pulse avalanche energy Test.

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Published: Dec 6, 2016 |