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2SK2828
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC–DC converter • Avalanche ratings
Outline
TO–3P
ADE-208-514 C (Z) 4th. Edition Feb 1999
D 2
1 G
1 2
33
S
1. Gate 2. Drain
(Flange) 3. Source
2SK2828
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation
VDSS VGSS ID I *1
D(pulse)
I DR Pch*2
Channel temperature
Tch
Storage temperature
Tstg
Note: 1. PW ≤ 10µs, duty cycle ≤ 1 % 2.