BB305C - Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier

Hitachi

Datasheet Details

Part number	BB305C
Manufacturer	Hitachi
File Size	66.68 KB
Description	Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier
Datasheet	BB305C_HitachiSemiconductor.pdf

Build in Biasing Circuit; To reduce using parts cost & PC board space. Superior cross modulation characteristics. High gain; (PG = 28 dB typ. at f = 200 MHz) Wide supply voltage range; Applicable with 5 V to 9 V supply voltage.
Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200V at C = 200 pF, Rs = 0 conditions.
Provide mini mold packages; CMPAK-4 (SOT-343mod) Outline CMPAK-4 2 3 1 4 1. Source 2. Gate1 3. Gate2 4.

📁 BB305C Similar Datasheet

BB304 - Silicon Epitaxial Planar Dual Capacitance Diodes (Telefunken)
BB304A - Silicon Variable Capacitance Diode (For FM tuners Monolithic chip with common cathode for perfect tracking of both diodes) (Siemens Group)
BB313 - ROBUST COMPACT ECONOMICAL BROADBAND SEISMOMETERS (PMD)
BB329 - Si Epitaxial Planar Capacitance Diode (Semtech Corporation)
BB35 - 0.35mmPitch Board-to-Board Connector (DDK)
BB3553 - Very Fast Buffer Amplifiers (Maxim)
BB369S - Tuner Diodes (General)
BB37931E - SINGLE PHASE MOULDED BRIDGES (ETC)

Other Datasheets by Hitachi

Published: Jun 3, 2005 |