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BB302C Build in Biasing Circuit MOS FET IC UHF RF Amplifier

BB302C Description

BB302C Build in Biasing Circuit MOS FET IC VHF RF Amplifier ADE-208-573 A (Z) 2nd.Edition September 1997 .

BB302C Features

* Build in Biasing Circuit; To reduce using parts cost & PC board space.
* Low noise characteristics; (NF = 1.7 dB typ. at f = 200 MHz)
* Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 240V at C=200pF, Rs=0 conditions.
* Provide mini mold packages;

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Datasheet Details

Part number
BB302C
Manufacturer
Hitachi
File Size
58.22 KB
Datasheet
BB302C_HitachiSemiconductor.pdf
Description
Build in Biasing Circuit MOS FET IC UHF RF Amplifier

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Build Biasing Circuit MOS FET UHF Amplifier Hitachi
Hitachi BB302C-like datasheet