BB302M Build in Biasing Circuit MOS FET IC UHF RF Amplifier

Hitachi

Description

BB302M Build in Biasing Circuit MOS FET IC VHF RF Amplifier ADE-208-572 A (Z) 2nd.Edition September 1997 .

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Datasheet Specifications

Part number: BB302M
Manufacturer: Hitachi
File Size: 61.89 KB
Datasheet: BB302M_HitachiSemiconductor.pdf
Description: Build in Biasing Circuit MOS FET IC UHF RF Amplifier

Features

* Build in Biasing Circuit; To reduce using parts cost & PC board space.
* Low noise characteristics; (NF = 1.7 dB typ. at f = 200 MHz)
* Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 240V at C=200pF, Rs=0 conditions.
* Provide mini mold packages;

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BB302M Build Biasing Circuit MOS FET UHF Amplifier Hitachi

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