BB301 - Build in Biasing Circuit MOS FET IC UHF RF Amplifier

Hitachi

Datasheet Details

Part number	BB301
Manufacturer	Hitachi
File Size	46.17 KB
Description	Build in Biasing Circuit MOS FET IC UHF RF Amplifier
Datasheet	BB301_HitachiSemiconductor.pdf

Build in Biasing Circuit; To reduce using parts cost & PC board space.
Low noise characteristics; (NF = 1.3 dB typ. at f = 200 MHz).
Withstanding to ESD; Build in ESD absorbing diode . Withstand up to 200 V at C = 200 pF, Rs = 0 conditions. Outline CMPAK.
4 2 3 4 1 1. Source 2. Gate1 3. Gate2 4. Drain BB301C Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate 1 to source voltage Gate 2 to source voltage Drain current Channel power dissipa.

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Published: Jun 3, 2005 |