BB102M Build in Biasing Circuit MOS FET IC UHF RF Amplifier

Hitachi

Description

BB102M Build in Biasing Circuit MOS FET IC UHF RF Amplifier ADE-208-587 (Z) 1st.Edition November 1997 .

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Datasheet Specifications

Part number: BB102M
Manufacturer: Hitachi
File Size: 64.54 KB
Datasheet: BB102M_HitachiSemiconductor.pdf
Description: Build in Biasing Circuit MOS FET IC UHF RF Amplifier

Features

* Build in Biasing Circuit; To reduce using parts cost & PC board space.
* Low noise characteristics; (NF = 2.1 dB typ. at f = 900 MHz)
* Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions.
* Provide mini mold packages;

BB102M Distributors

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