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BB101M Build in Biasing Circuit MOS FET IC UHF RF Amplifier

BB101M Description

BB101M Build in Biasing Circuit MOS FET IC UHF RF Amplifier ADE-208-504 1st.Edition .

BB101M Features

* Build in Biasing Circuit; To reduce using parts cost & PC board space.
* Low noise characteristics; (NF = 2.0 dB typ. at f = 900 MHz)
* Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200 V at C = 200 pF, Rs = 0 conditions. Outline MPAK-4 2 3 1 4 1. S

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Datasheet Details

Part number
BB101M
Manufacturer
Hitachi
File Size
48.11 KB
Datasheet
BB101M_HitachiSemiconductor.pdf
Description
Build in Biasing Circuit MOS FET IC UHF RF Amplifier

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📌 All Tags

Build Biasing Circuit MOS FET UHF Amplifier Hitachi
Hitachi BB101M-like datasheet