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BB112 - Silicon Variable Capacitance Diode (For AM tuning applications Specified tuning range 1 8.0 V)

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Part number BB112
Manufacturer Siemens Group
File Size 41.52 KB
Description Silicon Variable Capacitance Diode (For AM tuning applications Specified tuning range 1 8.0 V)
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BB 112 Silicon Variable Capacitance Diode q q BB 112 For AM tuning applications Specified tuning range 1 … 8.0 V Type BB 112 Marking – Ordering Code Pin Configuration Q62702-B240 Package1) TO-92 Maximum Ratings Parameter Reverse voltage Forward current, TA ≤ 60 ˚C Operating temperature range Symbol VR IF Top Values 12 50 – 55 … + 85 Unit V mA ˚C 1) For detailed information see chapter Package Outlines. Semiconductor Group 1 07.94 BB 112 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Reverse current VR = 10 V VR = 10 V, TA = 60 ˚C Diode capacitance, f = 1 MHz VR = 1 V VR = 8 V Capacitance ratio VR = 1 V, 8 V Series resistance VR = 1 V, f = 0.5 MHz Q factor VR = 1 V, f = 0.
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