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2SJ297 - Silicon P-Channel MOS FET

Hitachi

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Datasheet Details

Part number	2SJ297
Manufacturer	Hitachi
File Size	23.48 KB
Description	Silicon P-Channel MOS FET
Datasheet	2SJ297-Hitachi.pdf

2SJ297 Product details

Features

Low on-resistance.
High speed switching.
Low drive current.
4 V gate drive device can be driven from 5 V source.
Suitable for switching regulator, DC-DC converter.
Avalanche ratings Outline LDPAK 4 123 D G S 4 12 3 1. Gate 2. Drain 3. Source 4. Drain November 1996 2SJ297(L), 2SJ297(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse d.

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Other Datasheets by Hitachi

2SJ297L - Silicon P-Channel MOS FET
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Published: Jan 25, 2015 |