Datasheet4U.com

2SJ296 - Silicon P-Channel MOSFET

Hitachi

📥 Download Datasheet

2SJ296 Datasheet Preview — Preview of 2SJ296 PDF

datasheet Preview Page 2

datasheet Preview Page 3

Datasheet Details

Part number	2SJ296
Manufacturer	Hitachi
File Size	50.58 KB
Description	Silicon P-Channel MOSFET
Datasheet	2SJ296_Hitachi.pdf

2SJ296 Product details

Features

Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter Avalanche ratings Outline LDPAK 4 4 1 2 1 D G 2 3 3 S 1. Gate 2. Drain 3. Source 4. Drain www. DataSheet4U. com 2SJ296(L), 2SJ296(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode r.

📁 2SJ296 Similar Datasheet

2SJ290 - SILICON P-CHANNEL MOSFET (Hitachi Semiconductor)
2SJ291 - Silicon P-Channel MOS FET (Hitachi Semiconductor)
2SJ200 - P-Channel MOSFET (Toshiba Semiconductor)
2SJ201 - P-Channel MOSFET (Toshiba Semiconductor)
2SJ202 - P-Channel MOSFET (NEC)
2SJ203 - MOS FIELD EFFECT TRANSISTOR (NEC)
2SJ204 - P-Channel MOSFET (NEC)
2SJ205 - P-Channel MOSFET (NEC)

Other Datasheets by Hitachi

2SJ293 - Silicon P-Channel MOSFET
2SJ297 - Silicon P-Channel MOS FET
2SJ297L - Silicon P-Channel MOS FET
2SJ297S - Silicon P-Channel MOS FET
2SJ220 - Silicon P-Channel MOS FET
2SJ220L - Silicon P-Channel MOS FET

Published: Nov 22, 2007 |