Datasheet Details
Part number:
2SJ200
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
294.58 KB
Description:
P-channel mosfet.
2SJ200_ToshibaSemiconductor.pdf
2SJ200_ToshibaSemiconductor.pdf
Datasheet Details
Part number:
2SJ200
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
294.58 KB
Description:
P-channel mosfet.
2SJ200, P-Channel MOSFET
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ200 High Power Amplifier Application High breakdown voltage : VDSS = 180 V z High forward transfer admittance : |Yfs| = 4.0 S (typ.) z Complementary to 2SK1529 2SJ200 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain source voltage Gate source voltage Drain current (Note 1) Drain power dissipation (Tc = 25°C) Channel temperature Storage temperature range V
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