2SD2256 - Silicon NPN Transistor

Hitachi

Datasheet Details

High breakdown voltage and high current (VCEO = 120 V, I C = 25 A).
Built-in C-E diode Outline TO-3P 2 1 1. Base 2. Collector (Flange) 3. Emitter ID 1 2 3 3 2SD2256 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature C to E diode forward current Note: 1. Value at TC = 25°C. Symbol VCBO VCEO VE.

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Published: Sep 23, 2014 |