2SD2651 - Silicon NPN Epitaxial Transistor

Hitachi

Datasheet Details

Part number	2SD2651
Manufacturer	Hitachi
File Size	53.49 KB
Description	Silicon NPN Epitaxial Transistor
Datasheet	2SD2651_Hitachi.pdf

High breakdown voltage VCEO = -300V min Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 Free Datasheet http://www. datasheet4u. com/ 2SD2651 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 300 300 5 50 750 150 -55 to +150 Unit V V V mA mW °C °C Electrical Characteristics (Ta.

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Published: Nov 12, 2013 |