HSU276 - Silicon Schottky Barrier Diode for Mixer

Hitachi Semiconductor

Datasheet Details

Part number	HSU276
Manufacturer	Hitachi Semiconductor
File Size	24.76 KB
Description	Silicon Schottky Barrier Diode for Mixer
Datasheet	HSU276_HitachiSemiconductor.pdf

High forward current, Low capacitance.
Ultra small Resin Package (URP) is suitablefor high density surface mounting and high speed assembly. Ordering Information Type No. HSU276 Laser Mark 3 Package Code URP Outline Cathode mark Mark 1 3 2 1. Cathode 2. Anode HSU276 Absolute Maximum Ratings (Ta = 25°C) Item Reverse voltage Average rectified current Junction temperature Storage temperature Symbol VR IO Tj Tstg Value 3 30 125.
55 to +125 Unit V mA °C °C Electrica.

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Published: Mar 26, 2005 |