HSU227 - Silicon Schottky Barrier Diode for High Speed Switching

Hitachi Semiconductor

Datasheet Details

Part number	HSU227
Manufacturer	Hitachi Semiconductor
File Size	25.07 KB
Description	Silicon Schottky Barrier Diode for High Speed Switching
Datasheet	HSU227_HitachiSemiconductor.pdf

Low capacitance. (C=3.0pF max).
Ultra small Resin Package (URP) is suitablefor high density surface mounting and high speed assembly. Ordering Information Type No. HSU227 Laser Mark S3 Package Code URP Outline Cathode mark Mark 1 S3 2 1. Cathode 2. Anode HSU227 Absolute Maximum Ratings (Ta = 25°C) Item Repetitive peak reverse voltage Average rectified current Non-Repetitive peak forward surge current Junction temperature Storage temperature Note: Symbol VRRM Io Value 25.

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Published: Mar 26, 2005 |