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HSU83 - Silicon Epitaxial Planar Diode for High Voltage Switching

Features

  • High reverse voltage. (VR = 250V).
  • Ultra small Resin Package (URP) is suitablefor high density surface mounting and high speed assembly. Ordering Information Type No. HSU83 Laser Mark T Package Code URP Outline Cathode mark Mark 1 T 2 1. Cathode 2. Anode HSU83 Absolute Maximum Ratings (Ta = 25°C) Item Peak reverse voltage Reverse voltage Peak forward current Non-Repetitive peak forward surge current Average rectified current Junction temperature Storage temperature Note:.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HSU83 Silicon Epitaxial Planar Diode for High Voltage Switching ADE-208-307A(Z) Rev 1 Jun. 1996 Features • High reverse voltage. (VR = 250V) • Ultra small Resin Package (URP) is suitablefor high density surface mounting and high speed assembly. Ordering Information Type No. HSU83 Laser Mark T Package Code URP Outline Cathode mark Mark 1 T 2 1. Cathode 2. Anode HSU83 Absolute Maximum Ratings (Ta = 25°C) Item Peak reverse voltage Reverse voltage Peak forward current Non-Repetitive peak forward surge current Average rectified current Junction temperature Storage temperature Note: Symbol VRM VR I FM I FSM IO Tj Tstg *1 Value 300 250 300 2 100 125 –55 to +125 Unit V V mA A mA °C °C 1. Value at duration of 10msec.
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