4AK21 - Silicon N-Channel Power MOS FET Array

Hitachi Semiconductor

Datasheet Details

Part number	4AK21
Manufacturer	Hitachi Semiconductor
File Size	36.93 KB
Description	Silicon N-Channel Power MOS FET Array
Datasheet	4AK21_HitachiSemiconductor.pdf

Low on-resistance R DS(on) 0.09 , VGS = 10 V, I D = 4 A R DS(on) 0.12 , VGS = 4 V, I D = 4 A.
Capable of 4 V gate drive.
Low drive current.
High speed switching.
High density mounting.
Suitable for motor driver, solenoid driver and lamp driver.
Discrete packaged devices of same die: 2SK1302, 2SK1307 4AK21 Outline SP-10 3 D 4 G 2G 5 D 6 G 7 D 8 G 9 D 12 34 56 78 9 10 1S S 10 1, 10. Source 2, 4, 6, 8. Gate 3, 5, 7, 9. Drain.

📁 4AK21 Similar Datasheet

Other Datasheets by Hitachi Semiconductor

Published: Apr 1, 2005 |