4AK21 Silicon N-Channel Power MOS FET Array

Hitachi Semiconductor

Description

4AK21 Silicon N-Channel Power MOS FET Array Application High speed power switching .

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Datasheet Specifications

Part number: 4AK21
Manufacturer: Hitachi Semiconductor
File Size: 36.93 KB
Datasheet: 4AK21_HitachiSemiconductor.pdf
Description: Silicon N-Channel Power MOS FET Array

Features

* Low on-resistance R DS(on) 0.09 , VGS = 10 V, I D = 4 A R DS(on) 0.12 , VGS = 4 V, I D = 4 A
* Capable of 4 V gate drive
* Low drive current
* High speed switching
* High density mounting
* Suitable for motor driver, solenoid driver and lamp driver

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4AK21 Silicon N-Channel Power MOS FET Array Hitachi Semiconductor

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