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4AK26 Silicon N-Channel Power MOS FET Array

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Description

4AK26 Silicon N-Channel Power MOS FET Array Application High speed power switching .

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Datasheet Specifications

Part number
4AK26
Manufacturer
Hitachi Semiconductor
File Size
52.90 KB
Datasheet
4AK26_HitachiSemiconductor.pdf
Description
Silicon N-Channel Power MOS FET Array

Features

* Low on-resistance R DS(on) ≤ 0.06 , VGS = 10 V, I D = 5 A R DS(on) ≤ 0.075 , VGS = 4 V, I D = 5 A
* Capable of 4 V gate drive
* Low drive current
* High speed switching
* High density mounting
* Suitable for motor driver and solenoid driver and lamp

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