4AK26 - Silicon N-Channel Power MOS FET Array

Hitachi Semiconductor

Datasheet Details

Part number	4AK26
Manufacturer	Hitachi Semiconductor
File Size	52.90 KB
Description	Silicon N-Channel Power MOS FET Array
Datasheet	4AK26_HitachiSemiconductor.pdf

Low on-resistance R DS(on) ≤ 0.06 , VGS = 10 V, I D = 5 A R DS(on) ≤ 0.075 , VGS = 4 V, I D = 5 A.
Capable of 4 V gate drive.
Low drive current.
High speed switching.
High density mounting.
Suitable for motor driver and solenoid driver and lamp driver Outline SP-12 12 1 G 2 D 5 G 4 D 8 G 9 D 12 G 11 D 34 56 78 9 10 1112 S 3 S 6 S 7 S 10 1, 5, 8, 12. Gate 2, 4, 9, 11. Drain 3, 6, 7, 10. Source 4AK26 Absolute Maximum Ratings (Ta = 2.

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Published: Apr 1, 2005 |