4AK27 - Silicon N Channel MOS FET High Speed Power Switching

Hitachi Semiconductor

Datasheet Details

Part number	4AK27
Manufacturer	Hitachi Semiconductor
File Size	53.04 KB
Description	Silicon N Channel MOS FET High Speed Power Switching
Datasheet	4AK27_HitachiSemiconductor.pdf

Low on-resistance R DS(on) ≤ 0.15Ω, VGS = 10V, ID = 3.0A.
4V gate drive devices.
High density mounting Outline SP-10 3 D 2G 4 G 5 D 6 G 7 D 8 G 9 D 12 34 56 78 9 10 1 S S 10 1, 10. Source 2, 4, 6, 8. Gate 3, 5, 7, 9. Drain 4AK27 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy1 Channel dissipation Channel dissip.

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Published: Apr 1, 2005 |