Datasheet Details
Part number:
4AK19
Manufacturer:
Hitachi Semiconductor
File Size:
53.09 KB
Description:
Silicon n channel mos fet high speed power switching.
4AK19_HitachiSemiconductor.pdf
4AK19_HitachiSemiconductor.pdf
Datasheet Details
Part number:
4AK19
Manufacturer:
Hitachi Semiconductor
File Size:
53.09 KB
Description:
Silicon n channel mos fet high speed power switching.
4AK19, Silicon N Channel MOS FET High Speed Power Switching
4AK19 Features
* Low on-resistance N Channel: R DS(on) ≤ 0.5 Ω, VGS = 10 V, ID = 2.5 A R DS(on) ≤ 0.6 Ω, VGS = 4 V, ID = 2.5 A
* 4 V gate drive devices.
* High density mounting Outline SP-10 3 D 2G 4 G 5 D 6 G 7 D 8 G 9 D 12 34 56 78 9 10 1 S S 10 1, 10. Source 2, 4, 6, 8. Gate 3,
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