4AK17 - Silicon N-Channel Power MOS FET Array

Hitachi Semiconductor

Datasheet Details

Part number	4AK17
Manufacturer	Hitachi Semiconductor
File Size	50.15 KB
Description	Silicon N-Channel Power MOS FET Array
Datasheet	4AK17_HitachiSemiconductor.pdf

Low on-resistance R DS(on) ≤ 0.045 , VGS = 10 V, I D = 10 A R DS(on) ≤ 0.065 , VGS = 4 V, I D = 10 A.
Capable of 4 V gate drive.
Low drive current.
High speed switching.
High density mounting.
Suitable for motor driver, solenoid driver and lamp driver 4AK17 Outline SP-10 3 D 4 G 2G 5 D 6 G 7 D 8 G 9 D 12 34 56 78 9 10 1S S 10 1, 10. Source 2, 4, 6, 8. Gate 3, 5, 7, 9. Drain Absolute Maximum Ratings (Ta = 25°C) (1 Unit) Item Drain.

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Published: Apr 1, 2005 |