3SK322 - Silicon N-Channel Dual Gate MOS FET

Hitachi Semiconductor

Datasheet Details

Part number	3SK322
Manufacturer	Hitachi Semiconductor
File Size	90.15 KB
Description	Silicon N-Channel Dual Gate MOS FET
Datasheet	3SK322_HitachiSemiconductor.pdf

Low noise figure. NF = 1.0 dB typ. at f = 200 MHz.
Capable of low voltage operation.
Provide mini mold packages; MPAK-4R(SOT-143 var. ) Outline 3SK322 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate 1 to source voltage Gate 2 to source voltage Drain current Channel power dissipation Channel temperature Storage temperature Symbol VDS VG1S VG2S ID Pch Tch Tstg Ratings 12 ±8 ±8 25 150 150.
55 to +150 Unit V V V mA mW °C °C Attention: This.

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Published: Mar 30, 2005 |