3SK309 - UHF RF Amplifier

Hitachi Semiconductor

Datasheet Details

Part number	3SK309
Manufacturer	Hitachi Semiconductor
File Size	59.99 KB
Description	UHF RF Amplifier
Datasheet	3SK309_HitachiSemiconductor.pdf

Capable of low voltage operation (VDS = 1.5 to 3 V).
Excellent low noise characteristics (NF = 1.25 dB typ. at f = 900 MHz).
High power gain (PG = 21.0 dB typ. at f = 900 MHz) Outline CMPAK.
4 2 3 4 1 1. Source 2. Gate1 3. Gate2 4. Drain 3SK309 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate 1 to source voltage Gate 2 to source voltage Drain current Channel power dissipation Channel temperature Storage temperature Symbol VDS VG1S VG2S.

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Published: Mar 30, 2005 |