3SK321 - Silicon N-Channel Dual Gate MOS FET

Hitachi Semiconductor

Datasheet Details

Part number	3SK321
Manufacturer	Hitachi Semiconductor
File Size	59.20 KB
Description	Silicon N-Channel Dual Gate MOS FET
Datasheet	3SK321_HitachiSemiconductor.pdf

Low noise figure. NF = 2.0 dB typ. at f = 900 MHz.
Capable of low voltage operation.
Provide mini mold packages; MPAK-4R(SOT-143 var. ) Outline MPAK-4R 3 4 2 1 1. Source 2. Drain 3. Gate2 4. Gate1 3SK321 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate 1 to source voltage Gate 2 to source voltage Drain current Channel power dissipation Channel temperature Storage temperature Symbol VDS VG1S VG2S ID Pch Tch Tstg Ratings 12 ±8 ±8 25 150 150.

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Published: Mar 30, 2005 |