Description
HI-SINCERITY MICROELECTRONICS CORP.HI3669 NPN EPITAXIAL PLANAR TRANSISTOR Spec.No.: HE9029 Issued Date : 1997.11.14 Revised Date : 2006.02.20 Page.
The HI3669 is designed for using in power amplifier applications, power switching application.
Applications
* power switching application. Absolute Maximum Ratings (TA=25°C)
TO-251
* Maximum Temperatures Tstg Storage Temperature -55 ~ +150 °C Tj Junction Temperature +150 °C
* Maximum Power Dissipation Total Power Dissipation (TA=25°C) 1.25 W
* Maximum Voltages and Currents BVC
