HI32C, HI32C_Hi PNP EPITAXIAL PLANAR TRANSISTOR

Hi-Sincerity Mocroelectronics

Description

HI-SINCERITY MICROELECTRONICS CORP.Spec.No.: HE9002 Issued Date : 1994.03.02 Revised Date : 2002.01.17 Page No.: 1/3 HI32C PNP EPITAXIAL PLANAR .
The HI32C is designed for use in general purpose amplifier and low speed switching applications.

📥 Download Datasheet

HI32C Datasheet Preview — This datasheet PDF includes multiple part numbers: HI32C, HI32C_Hi. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: HI32C, HI32C_Hi
Manufacturer: Hi-Sincerity Mocroelectronics
File Size: 60.07 KB
Datasheet: HI32C_Hi-SincerityMocroelectronics.pdf
Description: PNP EPITAXIAL PLANAR TRANSISTOR
Note: This datasheet PDF includes multiple part numbers: HI32C, HI32C_Hi.
Please refer to the document for exact specifications by model.

Applications

* Absolute Maximum Ratings (Ta=25°C) TO-251
* Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C
* Maximum Power Dissipation Total Power Dissipation (Tc=25°C) 15W
* Maximum Voltages and Currents BVCBO Collector to Base Voltage -100 V BVCE

HI32C Distributors

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📌 All Tags

HI32C_Hi PNP EPITAXIAL PLANAR TRANSISTOR Hi-Sincerity Mocroelectronics

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